cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 1/6 HQP1498QF preliminary cystek product specification quadruple high voltage pnp ep itaxial planar transistor built-in base resistor HQP1498QF description ? high breakdown voltage. (bv ceo =-400v) ? low saturation voltage, typical v ce(sat) =-0.3v at ic/i b =-20ma/-1ma. ? complementary to hqn2498qf ? pb-free package equivalent circuit outline HQP1498QF sop-10 the following ratings and characteristics apply to each transistor in this device. absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current i c -300 ma total power dissipation pd 1.5 w junction temperature tj 150 c storage temperature tstg -55~+150 c
cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 2/6 HQP1498QF preliminary cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -400 - - v i c =-50 a bv ceo -400 - - v i c =-1ma bv ebo -7 - - v i e =-50 a i cbo - - -100 na v cb =-400v i cer - - -10 na v ce =-300v, r eb =4k i ebo - - -100 na v eb =-6v *v ce(sat) - -0.3 -0.5 v i c =-20ma, i b =-1ma *v ce(sat) - -0.7 -0.9 v i c =-50ma, i b =-5ma *v be(sat) - - -3.7 v i c =-20ma, i b =-2ma *h fe 100 - 270 - v ce =-10v, i c =-10ma *h fe 30 - - - v ce =-10v, i c =-100ma r 0.7 - 1.3 k - f t - 100 - mhz v ce =-10v, i c =-10ma, f=5mhz cob - 13 - pf v cb =-10v, i e =0a, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ordering information device package shipping marking HQP1498QF sop-10 (pb-free) 3000 pcs / tape & reel p1498
cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 3/6 HQP1498QF preliminary cystek product specification characteristic curves current gian vs collector current 10 100 1000 1 10 100 collector current---ic(ma) current gain---hfe vce = 5v vce = 10v saturation voltage vs collector current 10 100 1000 10000 1 10 100 collector current---ic(ma) saturation voltage---(mv) vce(sat) @ ic =10ib vce ( sat ) @ ic = 20ib saturation voltage vs collector current 100 1000 10000 11 0 1 0 0 power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) total power dissipation per package collector current---ic(ma) saturation voltage---(mv) vbe(sat) @ ic = 10ib power dissipation per transistor
cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 4/6 HQP1498QF preliminary cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 5/6 HQP1498QF preliminary cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c900qf issued date : 2009.10.30 revised date : 2009.11.20 page no. : 6/6 HQP1498QF preliminary cystek product specification sop-10 dimension inches millimeters inches millimeters dim min. max. min. max. marking: 10-lead sop-10 plastic surface mounted package cystek package code: qf p1498 dim min. max. min. max. a 0.2283 0.2441 5.80 6.20 m 0.0039 0.0098 0.10 0.25 b 0.1990 0.1969 4.80 5.00 h 0. 0118 0.0173 0.30 0.44 c 0.1496 0.1575 3.80 4.00 l 0.0531 0.0689 1.35 1.75 d 0 8 0 8 j 0.0148 ref. 0.375 ref. e 0.0157 0.0354 0.40 0.90 k 45 typ. 45 typ. f 0.0075 0.0098 0.19 0.25 g 0.0394 1.00 typ. notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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